IRLML9301TRPBF hexfet power mosfet micro3 tm (sot-23) IRLML9301TRPBF features and benefits features benefits s g 1 2 d 3 application(s) ?
v ds -30 v v gs max 20 v r ds(on) max (@v gs = -10v) 64 m r ds(on) max (@v gs = -4.5v) 103 m symbol parameter units v ds drain-source voltage v i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c maximum power dissipation p d @t a = 70c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v t j, t stg junction and storage temperature range c thermal resistance symbol parameter typ. max. units r ja junction-to-ambient ??? 100 r ja junction-to-ambient (t<10s) ??? 99 c/w a max. -3.6 -2.9 -55 to + 150 20 0.01 -30 1.3 0.8 -15 w low r ds(on) ( 64m ) lower switching losses industry-standard pinout multi-vendor compatibility compatible with existing surface mount techniques results in easier manufacturing rohs compliant containing no lead, no bromide and no halogen ? environmentally friendly msl1, consumer qualification increased reliability product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com
g d s electric characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -30 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.02 ??? v/c ??? 51 64 ??? 82 103 v gs(th) gate threshold voltage -1.3 ??? -2.4 v i dss ??? ??? 1 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? -100 gate-to-source reverse leakage ??? ??? 100 r g internal gate resistance ??? 12 ??? gfs forward transconductance 5.0 ??? ??? s q g total gate charge ??? 4.8 ??? q gs gate-to-source charge ??? 1.2 ??? q gd gate-to-drain ("miller") charge ??? 2.5 ??? t d(on) turn-on delay time ??? 9.6 ??? t r rise time ??? 19 ??? t d(off) turn-off delay time ??? 16 ??? t f fall time ??? 15 ??? c iss input capacitance ??? 388 ??? c oss output capacitance ??? 93 ??? c rss reverse transfer capacitance ??? 65 ??? source - drain ratings and characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 14 21 ns q rr reverse recovery charge ??? 7.2 11 nc ??? ??? ??? ??? pf a -1.3 -15 v dd =-15v na nc ns v ds = v gs , i d = -10 a v ds =-24v, v gs = 0v v ds = -24v, v gs = 0v, t j = 125c r ds(on) v gs = -4.5v, i d = -2.9a static drain-to-source on-resistance drain-to-source leakage current a m conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -3.6a mosfet symbol showing the v ds =-15v conditions v gs = -4.5v v gs = 0v v ds = -25v ? = 1.0khz r g = 6.8 v gs = -4.5v di/dt = 100a/ s v gs = -20v v gs = 20v t j = 25c, i s = -1.3a, v gs = 0v integral reverse p-n junction diode. v ds = -10v, i d =-3.6a i d = -3.6a i d = -1a t j = 25c, v r = -24v, i f =-1.3a IRLML9301TRPBF product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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